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? auirfn8405 base part number ? package type ? standard pack form quantity auirfn8405 pqfn 5mm x 6mm tape and reel 4000 AUIRFN8405TR orderable part number ? hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. automotive grade ? pqfn 5x6 mm g d s gate drain source v dss 40v r ds(on) typ. 1.6m ? i d (silicon limited) 187a ? max 2.0m ? i d (package limited) 95a applications ?? electric power steering (eps) ?? battery switch ?? start/stop micro hybrid ?? heavy loads ?? dc-dc converter parameter max. units i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (silicon limited) 187 ? a i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v (silicon limited) 132 ? i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 95 i dm pulsed drain current ? 670 ? p d @t a = 25c power dissipation 3.3 w p d @t c(bottom) = 25c power dissipation 136 linear derating factor 0.022 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 c ? t stg storage temperature range hexfet ? power mosfet features ?? advanced process technology ?? ultra low on-resistance ?? 175c operating temperature ?? fast switching ?? repetitive avalanche allowed up to tjmax ?? lead-free, rohs compliant ?? automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanc he rating. these features combine to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications. 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 avalanche characteristics e as(thermally limited) single pulse avalanche energy ? 190 e as (tested) single pulse avalanche energy 365 i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? mj mj downloaded from: http:///
2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 37 CCC mv/c reference to 25c, i d = 1.0ma ? r ds(on) static drain-to-source on-resistance CCC 1.6 2.0 m ?? v gs = 10v, i d = 50a v gs(th) gate threshold voltage 2.2 CCC 3.9 v v ds = v gs , i d = 100a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 40v, v gs = 0v CCC CCC 150 v ds = 40v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage CCC CCC 100 ?? v gs = 20v ? gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g internal gate resistance CCC 2.4 CCC dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions gfs forward transconductance 145 CCC CCC s v ds = 10v, i d = 50a q g total gate charge CCC 78 117 i d = 50a q gs gate-to-source charge CCC 21 CCC v ds = 20v q gd gate-to-drain ("miller" ) charge CCC 25 CCC v gs = 10v ? q sync total gate charge sync. (q g - q gd ) CCC 53 CCC t d(on) turn-on delay time CCC 9.5 CCC ns v dd = 20v t r rise time CCC 30 CCC i d = 50a t d(off) turn-off delay time CCC 58 CCC r g = 2.7 ? t f fall time CCC 33 CCC v gs = 10v ? c iss input capacitance CCC 5142 CCC pf v gs = 0v c oss output capacitance CCC 758 CCC v ds = 25v c rss reverse transfer capacitance CCC 501 CCC ? = 1.0 mhz c oss eff. (er) effective output capacita nce (energy related) CCC 900 CCC v gs = 0v, v ds = 0v to 32v ? c oss eff. (tr) effective output capacita nce (time related) CCC 1094 CCC v gs = 0v, v ds = 0v to 32v ? diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 187 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 670 ? a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC 0.9 1.3 v t j = 25c, i s = 50a, v gs = 0v ? dv/dt peak diode recovery ? CCC 5.2 CCC v/ns t j = 175c, i s = 50a, v ds = 40v t rr ? reverse recovery time CCC 27 CCC ns t j = 25c CCC 28 CCC t j = 125c q rr reverse recovery charge CCC 16 CCC nc t j = 25c CCC 18 CCC t j = 125c i rrm reverse recovery current CCC 0.92 CCC a t j = 25c nc ? v r = 34v, i f = 50a di/dt = 100a/s ? symbol parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 1.1 c/w r ? jc (top) junction-to-case ? CCC 30 r ? ja junction-to-ambient ? CCC 44 r ? ja (<10s) junction-to-ambient ? CCC 28 thermal resistance downloaded from: http:///
3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig. 1 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.25v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.25v 5.0v bottom 4.5v ? 60s pulse width tj = 175c 4.5v 2 3 4 5 6 7 8 9 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 04 06 08 01 0 01 2 0 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 50a fig. 4 normalized on-resistance vs. temperature downloaded from: http:///
4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 11. typical c oss stored energy 0.1 0.4 0.7 1.0 1.3 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 25 50 75 100 125 150 175 200 i d , d r a i n c u r r e n t ( a ) limited by package fig 9. maximum drain current vs. case temperature fig. 7 typical source-to-drain diode forward voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 38 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma -5 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 e n e r g y ( j ) fig 12. typical on-resistanc e vs. drain current 0 20 40 60 80 100 120 140 160 180 i d , drain current (a) 0 5 10 15 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.0v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package downloaded from: http:///
5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 50a fig 15. maximum avalanche energy vs. temperature downloaded from: http:///
6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 fig 17. threshold voltage vs. temperature fig. 20 - typical recovery current vs. dif/dt fig. 18 - typical recovery current vs. dif/dt fig. 21 - typical stored charge vs. dif/dt fig 16. typical on-resistance vs. gate voltage 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 2 4 6 8 10 i r r m ( a ) i f = 30a v r = 34v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 2 4 6 8 10 i r r m ( a ) i f = 50a v r = 34v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 50 100 150 200 250 q r r ( n c ) i f = 30a v r = 34v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 50 100 150 200 250 q r r ( n c ) i f = 50a v r = 34v t j = 25c t j = 125c fig. 19 - typical stored charge vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 1.0ma i d = 1.0a 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ? ) i d = 50a t j = 25c t j = 125c downloaded from: http:///
7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 22a. unclamped inductive test circuit fig 22b. unclamped inductive waveforms fig 23a. switching time test circuit fig 23b. switching time waveforms fig 24a. gate charge test circuit fig 24b. gate charge waveform downloaded from: http:///
8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "e" package details for footprint and stencil design recommendations, please refer to application note an-1136 at http://www.irf.com/technical-info/appnotes/an-1136.pdf for visual inspection recommendations, please refer to application note an-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf pqfn 5x6 outline "e" part marking downloaded from: http:///
9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 pqfn 5x6 outline "e" tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description typ e package 5 x 6 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 downloaded from: http:///
10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 ? qualification standards can be foun d at international rectifiers web site: http//www.irf.com/ ?? highest passing voltage. notes: ? ? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 95a. note that current limitations arisin g from heating of the device leads may oc cur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ? limited by tjmax, starting tj = 25c, l = 0.152mh, r g = 50 ? , i as = 50a, v gs =10v. ? i sd 50a, di/dt 961a/s, v dd v (br)dss , t j 175c. ? pulse width 400s; duty cycle 2%. ? coss eff. (tr) is a fixed capacitance that gives the same ch arging time as coss while vds is rising from 0 to 80%vdss. ? coss eff. (er) is a fixed capacitance that gives the same energy as coss while vds is rising from 0 to 80% vdss. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf ? r ? is measured at tj approximately 90c. ?? pulse drain current is limited at 380a by source bonding technology. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) pass ed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level pqfn 5mm x 6mm msl1 esd human body model class h1c (+/- 2000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes downloaded from: http:///
11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 3, 2014 ? auirfn8405 important notice unless specifically designated for the automotive market, internatio nal rectifier corporation and it s subsidiaries (ir) reserve the right to make corrections, modifi cations, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirement s with regards to product discontinuance and process change notification. all products are sold subject to irs terms and c onditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specificat ions applicable at the time of sale in accordance with irs standard warranty. testing and other qualit y control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, te sting of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer prod ucts and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations , and notices. reproduction of this information with altera- tions is an unfair and deceptive business practice. ir is not re sponsible or liable for such altered documentation. infor- mation of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indem nify and hold international rectifier and its officers, em- ployees, subsidiaries, affiliates, and di stributors harmless against a ll claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any clai m of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was neg ligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are de- signed and manufactured to meet dla military specifications required by certain m ilitary, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the bu yers own risk and that they are solely re sponsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in autom otive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designa- tion au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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